| PART |
Description |
Maker |
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| FGA25N120 FGA25N120AN FGA25N120ANTU |
Discrete, NPT IGBT
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| IRGPC50K |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 52A I(C) | TO-247AC
|
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| OM6556SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
|
Mitsubishi Electric, Corp.
|
| IXGH40N30BD1S |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 300V五（巴西）国际消费电子展|0A条（c）的|47SMD
|
IXYS, Corp.
|
| IXSK40N60BD1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 75A条一（c）|64AA
|
IXYS, Corp.
|
| F25A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|5A一（c）|47VAR
|
MEAN WELL Enterprises Co., Ltd.
|
| FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五（巴西）国际消费电子展| 100号A一（c）|米：HL080HD5.3
|
Infineon Technologies AG
|
| IXGH20N60U1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 40A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
